Semiconductors & Thin Films
High-purity zirconium and hafnium compounds support high-k dielectric films and specialist electronic-material processes.
Typical Uses
- hafnium oxide gate dielectric film deposition
- zirconium oxide dielectric layers for capacitor structures
Material Forms & Processing
Electronic-grade zirconium tetrachloride and hafnium tetrachloride are solid precursors for suitable ALD processes. Oxide materials serve separate source-material and research requirements; they are not interchangeable with chloride precursors.
Material Selection Notes
Impurities, moisture, delivery conditions and process compatibility require customer qualification. An electronic-grade label alone does not establish fab approval.
CUSTOM & TECHNICAL MATERIALS
A material requirement outside the standard range?
Discuss purity, particle size and packaging with our team. Share your intended process and specification so we can review technical feasibility and documentation needs.